AFT27S006NT1 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for cellular base station applications from 728 to 3700 MHz. It is packaged in a PLD-1.5W case with the backside center pad as the source terminal. The device supports a drain-source voltage up to 65 Vdc and operates with a junction temperature range of -40 to +150 °C. Thermal resistance from junction to case is 3.4 °C/W. It meets ESD protection standards per JESD22-A114 (Class 1B), EIA/JESD22-A115 (Class A), and JESD22-C101 (Class III), and has a moisture sensitivity level of 3 per JESD22-A113. Typical performance includes 28.8 dBm average output power at 2140 MHz with 28 Vdd and 70 mA quiescent current, 22.8 dB power gain, 19.8% drain efficiency, and -44.6 dBc adjacent channel power ratio under W-CDMA modulation.
N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | AFT27S006NT1 |
| Product Name | RF Power Transistor |
| Package Type | Plastic SMT |
