The A5G26H110NT4 is a 15 W asymmetrical Doherty RF power GaN amplifier designed for 5G base station applications in the 2496 to 2690 MHz frequency range. It is packaged in a DFN 7 × 6.5 surface-mount case and operates with a recommended drain voltage of 48 Vdc. The device supports high output VSWR and is optimized for low-complexity linearization in massive MIMO systems. Thermal resistance from junction to case is 6.2 °C/W under rated conditions. It meets ESD protection class 1A per JESD22-A113 and has a moisture sensitivity level of 3 per JESD22-A113 and J-STD-020. Maximum channel temperature is 225 °C, and case operating temperature ranges from -55 to +150 °C.
This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | A5G26H110NT4 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
