The 1011GN-1600VG is a GaN on SiC HEMT transistor designed for L-band avionics at 1030/1090 MHz, delivering 1600 W pulsed output power at 50 V or 52 V drain voltage with 18.5 dB minimum gain and 70% drain efficiency under 32 µs pulse width and 2% duty cycle. It is packaged in a single-ended Gemini case, measuring 40.89 to 41.40 mm in length and 35.43 to 35.68 mm in width, with single gate and drain bias feeds. The device supports load mismatch tolerance up to 3:1 VSWR, operates with a junction temperature up to +200°C, and features gold metallization and eutectic attach for reliability. Thermal resistance is 0.12 °C/W under pulse conditions.
The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power with over 18.6 dB gain and greater than 70% drain efficiency at both 32us pulse width, 2% duty cycle, Mode-S ELM, and IFF pulse formats. The transistor is internally pre-matched for optimal performance and utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Best Size, Weight, and Power (SWaP) output stage designs can be achieved by taking advantage of the small footprint single-ended industry standard Gemini packaged device with single gate and drain bias feeds.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 1011GN-1600VG |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
