The ALD110914PAL is a dual N-channel enhancement mode MOSFET array in an 8-pin plastic dual in-line package, designed for precision analog applications requiring matched transistor characteristics. The devices feature a gate threshold voltage of 1.40V with a match tolerance of ±10mV, a maximum drain-source voltage of 10.6V, and a power dissipation rating of 500mW. Input leakage current is specified at 30pA at 25°C, and input capacitance is 2.5pF typical. The MOSFETs exhibit a DC current gain exceeding 10^8, a transconductance mismatch of 1.8%, and a temperature coefficient of gate threshold voltage at -1.7mV/°C. The package is rated for operation from 0°C to +70°C and meets RoHS lead-free requirements. The devices are suitable for precision current mirrors, differential amplifiers, and low-voltage analog switching applications.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110914PAL | 1014-1042-ND | ALD110914PAL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |