Advanced Linear Devices, Inc. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY ALD110914PAL

Description
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
Request a Quote
Description
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The ALD110914PAL is a dual N-channel enhancement mode MOSFET array in an 8-pin plastic dual in-line package, designed for precision analog applications requiring matched transistor characteristics. The devices feature a gate threshold voltage of 1.40V with a match tolerance of ±10mV, a maximum drain-source voltage of 10.6V, and a power dissipation rating of 500mW. Input leakage current is specified at 30pA at 25°C, and input capacitance is 2.5pF typical. The MOSFETs exhibit a DC current gain exceeding 10^8, a transconductance mismatch of 1.8%, and a temperature coefficient of gate threshold voltage at -1.7mV/°C. The package is rated for operation from 0°C to +70°C and meets RoHS lead-free requirements. The devices are suitable for precision current mirrors, differential amplifiers, and low-voltage analog switching applications.

Datasheet Summary
Powered by GS/AI

The ALD110914PAL is a dual N-channel enhancement mode MOSFET array in an 8-pin plastic dual in-line package, designed for precision analog applications requiring matched transistor characteristics. The devices feature a gate threshold voltage of 1.40V with a match tolerance of ±10mV, a maximum drain-source voltage of 10.6V, and a power dissipation rating of 500mW. Input leakage current is specified at 30pA at 25°C, and input capacitance is 2.5pF typical. The MOSFETs exhibit a DC current gain exceeding 10^8, a transconductance mismatch of 1.8%, and a temperature coefficient of gate threshold voltage at -1.7mV/°C. The package is rated for operation from 0°C to +70°C and meets RoHS lead-free requirements. The devices are suitable for precision current mirrors, differential amplifiers, and low-voltage analog switching applications.

Suppliers

Company
Product
Description
Supplier Links
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110914PAL - Advanced Linear Devices, Inc.
Sunnyvale, CA, United States
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY
ALD110914PAL
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY ALD110914PAL
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP

Supplier's Site Datasheet
FET, MOSFET Arrays - 1014-1042-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1014-1042-ND
FET, MOSFET Arrays 1014-1042-ND
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP

Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD110914PAL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ALD110914PAL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ALD110914PAL
MOSFET 2N-CH 10.6V 8DIP

MOSFET 2N-CH 10.6V 8DIP

Supplier's Site

Technical Specifications

  Advanced Linear Devices, Inc. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number ALD110914PAL 1014-1042-ND ALD110914PAL
Product Name QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10 volts
IDSS 3 milliamps
Unlock Full Specs
to access all available technical data