30V, N-Channel NexFET? Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150
Manufacturer: Texas Instruments
Win Source Part Number: 013369-CSD17505Q5A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 13nC @ 4.5V
Max Input Capacitance: 1980pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)
MOSFET N-CH 30V 24A/100A 8VSON
MOSFET 30V,NCh NexFET Power MOSFET
MOSFET N-CH 30V 24A/100A 8VSON
| Texas Instruments | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD17505Q5A | 013369-CSD17505Q5A | 296-28082-2-ND | CSD17505Q5A | CSD17505Q5A | CSD17505Q5A |
| Product Name | CSD17505Q5A 30V, N-Channel NexFET? Power MOSFET with 20 Volt Vgs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17505Q5A | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| rDS(on) | 0.0046 ohms | |||||
| IDSS | 153000 milliamps | 24000 milliamps | ||||
| QG | 10 nC |
