Qorvo DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT TGF2023-2-01

Description
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
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Description
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
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Suppliers

Company
Product
Description
Supplier Links
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-01 - Qorvo
Greensboro, NC, United States
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-01
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT TGF2023-2-01
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.

The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-TGF2023-2-01TR-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-TGF2023-2-01TR-ND
RF FETs, MOSFETs 2312-TGF2023-2-01TR-ND
DC-18GHZ,6W DISCRETE PWR GAN/SIC

DC-18GHZ,6W DISCRETE PWR GAN/SIC

Buy Now Datasheet
Transistors - TGF2023-2-01 - ODG (Origin Data Global)
Shenzhen, China
Transistors
TGF2023-2-01
Transistors TGF2023-2-01
RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB

RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB

Supplier's Site Datasheet

Technical Specifications

  Qorvo DigiKey ODG (Origin Data Global)
Product Category RF Transistors Transistors Transistors
Product Number TGF2023-2-01 2312-TGF2023-2-01TR-ND TGF2023-2-01
Product Name DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT RF FETs, MOSFETs Transistors
Transistor Technology / Material GaN on SiC
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