Qorvo DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor QPD0020

Description
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.
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Description
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.
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DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor - QPD0020 - Qorvo
Greensboro, NC, United States
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
QPD0020
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor QPD0020
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD0020
Product Name DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Transistor Technology / Material DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
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