Qorvo DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor QPD0020

Description
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.
Request a Quote Datasheet
Description
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor - QPD0020 - Qorvo
Greensboro, NC, United States
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
QPD0020
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor QPD0020
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and ROHS compliant.

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD0020
Product Name DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Transistor Technology / Material DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor - T2G6003028-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-200
Power Gain 14 dB
View Details
4 suppliers
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor - TGF2978-SM - Qorvo
Specs
Transistor Technology / Material GaN
Package Type QFN
Power Gain 11 dB
View Details
3 suppliers
DC - 20 GHz, 800 um Discrete GaAs pHEMT Die - QPD2080D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
Package Type Die
View Details
3 suppliers
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor - QPD1022 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type QFN
Power Gain 24 dB
View Details
2 suppliers