Qorvo DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor TGF2936

Description
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.
  • DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor - TGF2936 - Qorvo
    Qorvo
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Description
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.
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DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor - TGF2936 - Qorvo
Qorvo
Greensboro, NC, United States
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor
TGF2936
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor TGF2936
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.

The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number TGF2936
Product Name DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor
Transistor Technology / Material GaN
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