Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
GaN FETs DC-6.0GHz 30 Watt 28V GaN Flangeless Product overview: T2G6003028-FS from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6.0GHz, 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6.0GHz, 28V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-T2G6003028-FS can be used for catalog matching and distributor lookup.
DC-6 GHZ,30W,28V GAN RF PWR TR
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
| Qorvo | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors |
| Product Number | T2G6003028-FS | 278-T2G6003028-FS | 2312-T2G6003028-FS-ND | T2G6003028-FS |
| Product Name | DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor | 6.0GHz 28V MOSFET Transistor | RF FETs, MOSFETs | RF JFET Transistors |
| Transistor Technology / Material | GaN | |||
| Transistor Grade / Operating Range | Military | |||
| Package Type | NI-200 | Tray | 2L-FLG | |
| Power Gain | 14 dB |
