Qorvo 2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor QPD2796

Description
Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor. The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2796 can deliver PSAT of 200 W at 48 V operation. Lead-free and ROHS compliant
  • 2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor - QPD2796 - Qorvo
    Qorvo
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Description
Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor. The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2796 can deliver PSAT of 200 W at 48 V operation. Lead-free and ROHS compliant
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2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor - QPD2796 - Qorvo
Qorvo
Greensboro, NC, United States
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor
QPD2796
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor QPD2796
Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor. The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2796 can deliver PSAT of 200 W at 48 V operation. Lead-free and ROHS compliant

Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.

The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD2796 can deliver PSAT of 200 W at 48 V operation.

Lead-free and ROHS compliant

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD2796
Product Name 2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor
Transistor Technology / Material GaN
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