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Qorvo 750 V, 23 mohm SiC FET UJ4C075023B7S

Description
Qorvo's UJ4C075023B7S is a 750 V, 23 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 Qualified
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Suppliers

Company
Product
Description
Supplier Links
750 V, 23 mohm SiC FET - UJ4C075023B7S - Qorvo
Greensboro, NC, United States
750 V, 23 mohm SiC FET
UJ4C075023B7S
750 V, 23 mohm SiC FET UJ4C075023B7S
Qorvo's UJ4C075023B7S is a 750 V, 23 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 Qualified

Qorvo's UJ4C075023B7S is a 750 V, 23 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 Qualified

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UJ4C075023B7SDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ4C075023B7SDKR-ND
Single FETs, MOSFETs 2312-UJ4C075023B7SDKR-ND
750V/23MOHM, N-OFF SIC CASCODE,

750V/23MOHM, N-OFF SIC CASCODE,

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UJ4C075023B7SCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ4C075023B7SCT-ND
Single FETs, MOSFETs 2312-UJ4C075023B7SCT-ND
750V/23MOHM, N-OFF SIC CASCODE,

750V/23MOHM, N-OFF SIC CASCODE,

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UJ4C075023B7STR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ4C075023B7STR-ND
Single FETs, MOSFETs 2312-UJ4C075023B7STR-ND
750V/23MOHM, N-OFF SIC CASCODE,

750V/23MOHM, N-OFF SIC CASCODE,

Supplier's Site Datasheet

Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number UJ4C075023B7S 2312-UJ4C075023B7SDKR-ND
Product Name 750 V, 23 mohm SiC FET Single FETs, MOSFETs
Transistor Technology / Material 750 V, 23 mohm SiC FET
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