Qorvo DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor T2G6000528-Q3

Description
Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
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Description
Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor - T2G6000528-Q3 - Qorvo
Greensboro, NC, United States
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
T2G6000528-Q3
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor T2G6000528-Q3
Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-T2G6000528-Q3-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-T2G6000528-Q3-ND
RF FETs, MOSFETs 2312-T2G6000528-Q3-ND
DC-6 GHZ, 10W, 28V GAN RF PWR TR

DC-6 GHZ, 10W, 28V GAN RF PWR TR

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Transistors T2G6000528-Q3
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz

RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
T2G6000528-Q3
RF JFET Transistors T2G6000528-Q3
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz

RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz

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Technical Specifications

  Qorvo DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors Transistors
Product Number T2G6000528-Q3 2312-T2G6000528-Q3-ND T2G6000528-Q3 T2G6000528-Q3
Product Name DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor RF FETs, MOSFETs Transistors RF JFET Transistors
Transistor Technology / Material DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-200 2L-FLG
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