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Qorvo 750 V, 58 mohm SiC FET UJ4C075060K4S

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750 V, 58 mohm SiC FET - UJ4C075060K4S - Qorvo
Greensboro, NC, United States
750 V, 58 mohm SiC FET
UJ4C075060K4S
750 V, 58 mohm SiC FET UJ4C075060K4S
Qorvo's UJ4C075060K4S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Qorvo's UJ4C075060K4S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UJ4C075060K4S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ4C075060K4S-ND
Single FETs, MOSFETs 2312-UJ4C075060K4S-ND
N-Channel 750V 28A (Tc) 155W (Tc) Through Hole TO-247-4

N-Channel 750V 28A (Tc) 155W (Tc) Through Hole TO-247-4

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UJ4C075060K4S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UJ4C075060K4S
SICFET N-CH 750V 28A TO247-4

SICFET N-CH 750V 28A TO247-4

Supplier's Site
Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs -  - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Manufacturer: Qorvo Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 750 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole

Manufacturer: Qorvo
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 750 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole

Supplier's Site Datasheet

Technical Specifications

  Qorvo DigiKey Acme Chip Technology Co., Limited Win Source Electronics
Product Category RF Transistors Transistors RF Transistors Transistors
Product Number UJ4C075060K4S 2312-UJ4C075060K4S-ND UJ4C075060K4S
Product Name 750 V, 58 mohm SiC FET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Transistor Technology / Material 750 V, 58 mohm SiC FET
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