The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
.96-1.215GHZ 1800W,65V,GAN RF IN
| Qorvo | DigiKey | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | QPD1025 | 2312-QPD1025-ND |
| Product Name | 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor | RF FETs, MOSFETs |
| Transistor Technology / Material | 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor |
