Qorvo DC - 20 GHz, 400 um Discrete GaAs pHEMT Die QPD2040D

Description
Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression. This performance makes the QPD2040D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.
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Description
Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression. This performance makes the QPD2040D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.
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Suppliers

Company
Product
Description
Supplier Links
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die - QPD2040D - Qorvo
Greensboro, NC, United States
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
QPD2040D
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die QPD2040D
Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression. This performance makes the QPD2040D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.

Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression. This performance makes the QPD2040D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-QPD2040D-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-QPD2040D-ND
RF FETs, MOSFETs 2312-QPD2040D-ND
0.40 MM PWR PHEMT

0.40 MM PWR PHEMT

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number QPD2040D 2312-QPD2040D-ND
Product Name DC - 20 GHz, 400 um Discrete GaAs pHEMT Die RF FETs, MOSFETs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
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