Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
| Qorvo | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | QPD1003 | QPD1003 |
| Product Name | 1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET | RF JFET Transistors |
| Transistor Type | IMFET | JFET |
