Qorvo 1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET QPD1003

Description
Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
  • 1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET - QPD1003 - Qorvo
    Qorvo
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Description
Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
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1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET - QPD1003 - Qorvo
Qorvo
Greensboro, NC, United States
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET
QPD1003
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET QPD1003
Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF JFET Transistors
QPD1003
RF JFET Transistors QPD1003
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

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Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number QPD1003 QPD1003
Product Name 1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET RF JFET Transistors
Transistor Type IMFET JFET
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
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