Qorvo 8.5 - 11 GHz, 4 Watt GaN Power Amplifier QPA1022D

Description
Qorvo's QPA1022D is a MMIC power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022D provides > 4 W of saturated output power and 24 dB of large-signal gain while achieving > 40% power-added efficiency. The QPA1022D is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension of 2.65 x 1.25 x 0.10 mm, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems. For additional information on GaN thermal performance refer to the following application note and video.
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Description
Qorvo's QPA1022D is a MMIC power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022D provides > 4 W of saturated output power and 24 dB of large-signal gain while achieving > 40% power-added efficiency. The QPA1022D is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension of 2.65 x 1.25 x 0.10 mm, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems. For additional information on GaN thermal performance refer to the following application note and video.
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Suppliers

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Product
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8.5 - 11 GHz, 4 Watt GaN Power Amplifier - QPA1022D - Qorvo
Greensboro, NC, United States
8.5 - 11 GHz, 4 Watt GaN Power Amplifier
QPA1022D
8.5 - 11 GHz, 4 Watt GaN Power Amplifier QPA1022D
Qorvo's QPA1022D is a MMIC power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022D provides > 4 W of saturated output power and 24 dB of large-signal gain while achieving > 40% power-added efficiency. The QPA1022D is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension of 2.65 x 1.25 x 0.10 mm, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPA1022D is a MMIC power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022D provides > 4 W of saturated output power and 24 dB of large-signal gain while achieving > 40% power-added efficiency.

The QPA1022D is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension of 2.65 x 1.25 x 0.10 mm, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
RF Amplifiers - 2312-QPA1022D-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
2312-QPA1022D-ND
RF Amplifiers 2312-QPA1022D-ND
8.5 - 11 GHZ, 4 W GAN PA

8.5 - 11 GHZ, 4 W GAN PA

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Technical Specifications

  Qorvo DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number QPA1022D 2312-QPA1022D-ND
Product Name 8.5 - 11 GHz, 4 Watt GaN Power Amplifier RF Amplifiers
Amplifier Type Power Amplifier Low Noise Amplifier; Power Amplifier
Applications Military / Defense; Radar Systems Radar
RoHS Compliant RoHS
Frequency Range 8500 to 11000 MHz 8500 to 11000 MHz
Minimum Gain 24 dB 31 dB
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