Mini-Circuits Connectorized SMA, High Power Amplifier, 20 MHz to 500 MHz, 50Ω ZHL-50W-GANX+

Description
Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W (typical) of output power at 1 dB Compression Point from 20 MHz to 500 MHz and are well suited for a variety of high-power test setups as well as communication applications. They are ruggedly designed and provide unconditional stability and built-in self-protection against over and reverse voltage and over temperature conditions. The GaN Transistors boast a maximum junction temperature up to +250 ºC translating into the higher MTBF and improved reliability.
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Description
Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W (typical) of output power at 1 dB Compression Point from 20 MHz to 500 MHz and are well suited for a variety of high-power test setups as well as communication applications. They are ruggedly designed and provide unconditional stability and built-in self-protection against over and reverse voltage and over temperature conditions. The GaN Transistors boast a maximum junction temperature up to +250 ºC translating into the higher MTBF and improved reliability.
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Suppliers

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Product
Description
Supplier Links
Connectorized SMA, High Power Amplifier, 20 MHz to 500 MHz, 50Ω - ZHL-50W-GANX+ - Mini-Circuits
Brooklyn, NY, United States
Connectorized SMA, High Power Amplifier, 20 MHz to 500 MHz, 50Ω
ZHL-50W-GANX+
Connectorized SMA, High Power Amplifier, 20 MHz to 500 MHz, 50Ω ZHL-50W-GANX+
Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W (typical) of output power at 1 dB Compression Point from 20 MHz to 500 MHz and are well suited for a variety of high-power test setups as well as communication applications. They are ruggedly designed and provide unconditional stability and built-in self-protection against over and reverse voltage and over temperature conditions. The GaN Transistors boast a maximum junction temperature up to +250 ºC translating into the higher MTBF and improved reliability.

Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W (typical) of output power at 1 dB Compression Point from 20 MHz to 500 MHz and are well suited for a variety of high-power test setups as well as communication applications. They are ruggedly designed and provide unconditional stability and built-in self-protection against over and reverse voltage and over temperature conditions. The GaN Transistors boast a maximum junction temperature up to +250 ºC translating into the higher MTBF and improved reliability.

Supplier's Site Datasheet
RF Amplifiers - 3157-ZHL-50W-GANX+-ND - DigiKey
Thief River Falls, MN, United States
HPA, 20 - 500 MHZ, 50 OHM

HPA, 20 - 500 MHZ, 50 OHM

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Technical Specifications

  Mini-Circuits DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number ZHL-50W-GANX+ 3157-ZHL-50W-GANX+-ND
Product Name Connectorized SMA, High Power Amplifier, 20 MHz to 500 MHz, 50Ω RF Amplifiers
Amplifier Type Power Amplifier Low Noise Amplifier; Power Amplifier
Frequency Range 20 to 500 MHz 20 to 500 MHz
Minimum Gain 1.2 dB 47 dB
Maximum Gain 1.2 dB 47 dB
Output Power 46.2 to 48 dBm 48 dBm
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