Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W (typical) of output power at 1 dB Compression Point from 20 MHz to 500 MHz and are well suited for a variety of high-power test setups as well as communication applications. They are ruggedly designed and provide unconditional stability and built-in self-protection against over and reverse voltage and over temperature conditions. The GaN Transistors boast a maximum junction temperature up to +250 ºC translating into the higher MTBF and improved reliability.
HPA, 20 - 500 MHZ, 50 OHM
| Mini-Circuits | DigiKey | |
|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers |
| Product Number | ZHL-50W-GAN+ | 3157-ZHL-50W-GAN+-ND |
| Product Name | Connectorized SMA, High Power Amplifier, 20 MHz to 500 MHz, 50Ω | RF Amplifiers |
| Amplifier Type | Power Amplifier | Low Noise Amplifier; Power Amplifier |
| Frequency Range | 20 to 500 MHz | 20 to 500 MHz |
| Minimum Gain | 1.2 dB | 47 dB |
| Maximum Gain | 1.2 dB | 47 dB |
| Output Power | 46.2 to 48 dBm | 48 dBm |
