The Mini-Circuits ZHL-100W-GAN+ utilizes high power Galium Nitride (GaN) output stage, which results in higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. GaN FET’s boast a maximum junction temperature of 250°C translating into higher operating temperatures without adversely affecting the MTBF.
| Mini-Circuits | DigiKey | |
|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers |
| Product Number | ZHL-100W-GANX+ | 3157-ZHL-100W-GANX+-ND |
| Product Name | Connectorized SMA, High Power, Linear Amplifier, 20 MHz to 500 MHz, 50Ω | RF Amplifiers |
| Amplifier Type | Power Amplifier | Low Noise Amplifier; Power Amplifier |
| Operating Temperature | -25 to 65 C (-13 to 149 F) | |
| Package Type | Connectorized | Connectorized; Module, SMA Connectors |
| Connectors | SMA | |
| Nominal Impedance | 50 |
