The M3SWA-2-50DRA+ is a high isolation fast switching absorptive SPDT switch with integral CMOS driver, operates with single positive supply voltage while consuming, 50 µA typical. It has been designed for wideband operation. It is packaged in a tiny 3.25 x 3.25 mm, 8-lead package passes +250 V for ESD (HBM). SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION RF Common Cblock DUT RF V RF-OUT2 Cblock Section Cblock DD RF1 RF2 RF-IN CMOS-GND Paddle NC CMOS-IN GND RF-OUT1 Internal CMOS Driver Control V DD Pad Function Description Number RF-IN 6 RF Common/ SUM Port, Requires external DC block RF-OUT1 1 RF Out #1/In Port #1, Requires external DC block RF-OUT2 4 RF Out #1/In Port #2, Requires external DC block Control 2 CMOS Control IN V 5 Supply Voltage DD NC 7 No Connection CMOS-GND 3 CMOS Ground GND 8, Paddle RF Ground REV. A ECO-026600 M3SWA-2-50DRA+ MCL NY 260429 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c
om PAGE 1 OF 5 FAST SWITCHING SPDT RF Switch M3SWA-2-50DRA+ 50Ω 0.3 to 4500 MHz Absorptive RF Switch with Internal Driver Single Supply Voltage, +3 V to +5 V RF ELECTRICAL SPECIFICATIONS1, T = +25°C, 50Ω, V = +5 V AMB DD Parameter Condition (MHz) Min. Typ. Max. Units Frequency Range 10 4500 MHz 10 – 0.6 1.0 100 – 0.7 1.0 Insertion Loss2,3 1000 – 0.8 1.2 dB 2000 – 1.0 1.4 4500 – 1.2 1.9 10 – 74.0 – 100 – 59.3 – Isolation Between Common Port & RF1/RF2 Ports 1000 – 61.5 – dB 2000 – 50.8 – 4500 – 39.5 – 10 – 74.3 – 100 – 61.0 – Isolation Between RF1 & RF2 Ports 1000 – 51.8 – dB 2000 – 46.5 – 4500 – 37.4 – 10 – 24.3 – 100 – 24.1 – Return Loss 1000 – 20.8 – dB (ON STATE) 2000 – 16.7 – 4500 – 17.0 – 500 – 12.9 – Return Loss 1000 – 20.1 – dB (OFF STATE) 2000 – 28.6 – 4500 – 12.8 – 500-1000 – +30 – Input 0.2 dB Compression 1000-2000 – +30 – dBm 2000-4500 – +27 – 1. Tested on Mini-Circuits’ test board TB-159A+, using Agilent’s N5230A network analyzer (see Characterization test circuit, Fig. 1). 2. Insertion loss values are de-embedded from test board loss. 3. Needs external blocking capacitors on all RF ports. (Suggested Value = 47 pF) DC ELECTRICAL SPECIFICATIONS Parameter Min. Typ. Max. Units Supply Voltage, V +3.0 – +5.0 V DD Supply Current – 50 200 µA Control Voltage Low 0 – +0.5 V Control Voltage High +0.7 V – V V DD DD Control Current – 0.2 10 µA www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c
om PAGE 2 OF 5 FAST SWITCHING SPDT RF Switch M3SWA-2-50DRA+ 50Ω 0.3 to 4500 MHz Absorptive RF Switch with Internal Driver Single Supply Voltage, +3 V to +5 V SWITCHING SPECIFICATIONS Parameter Condition Min. Typ. Max. Units Switching Time – 29 – ns 50% Control to 90%/10% RF RF P = 0 dBm IN RF Freq. = 500 MHz Video Leakage Control Freq. = 500 KHz – 24.8 – mV Control High = +3.7 V Control Low = 0 V Rise/Fall Time – 16 – ns 10 to 90% or 90 to 10%
The M3SWA-2-50DRA+ is a high isolation fast switching absorptive SPDT switch with integral CMOS driver, operates with single positive supply voltage while consuming, 50 µA typical. It has been designed for wideband operation. It is packaged in a tiny 3.25 x 3.25 mm, 8-lead package passes +250 V for ESD (HBM). SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION RF Common Cblock DUT RF V RF-OUT2 Cblock Section Cblock DD RF1 RF2 RF-IN CMOS-GND Paddle NC CMOS-IN GND RF-OUT1 Internal CMOS Driver Control V DD Pad Function Description Number RF-IN 6 RF Common/ SUM Port, Requires external DC block RF-OUT1 1 RF Out #1/In Port #1, Requires external DC block RF-OUT2 4 RF Out #1/In Port #2, Requires external DC block Control 2 CMOS Control IN V 5 Supply Voltage DD NC 7 No Connection CMOS-GND 3 CMOS Ground GND 8, Paddle RF Ground REV. A ECO-026600 M3SWA-2-50DRA+ MCL NY 260429 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 5 FAST SWITCHING SPDT RF Switch M3SWA-2-50DRA+ 50Ω 0.3 to 4500 MHz Absorptive RF Switch with Internal Driver Single Supply Voltage, +3 V to +5 V RF ELECTRICAL SPECIFICATIONS1, T = +25°C, 50Ω, V = +5 V AMB DD Parameter Condition (MHz) Min. Typ. Max. Units Frequency Range 10 4500 MHz 10 – 0.6 1.0 100 – 0.7 1.0 Insertion Loss2,3 1000 – 0.8 1.2 dB 2000 – 1.0 1.4 4500 – 1.2 1.9 10 – 74.0 – 100 – 59.3 – Isolation Between Common Port & RF1/RF2 Ports 1000 – 61.5 – dB 2000 – 50.8 – 4500 – 39.5 – 10 – 74.3 – 100 – 61.0 – Isolation Between RF1 & RF2 Ports 1000 – 51.8 – dB 2000 – 46.5 – 4500 – 37.4 – 10 – 24.3 – 100 – 24.1 – Return Loss 1000 – 20.8 – dB (ON STATE) 2000 – 16.7 – 4500 – 17.0 – 500 – 12.9 – Return Loss 1000 – 20.1 – dB (OFF STATE) 2000 – 28.6 – 4500 – 12.8 – 500-1000 – +30 – Input 0.2 dB Compression 1000-2000 – +30 – dBm 2000-4500 – +27 – 1. Tested on Mini-Circuits’ test board TB-159A+, using Agilent’s N5230A network analyzer (see Characterization test circuit, Fig. 1). 2. Insertion loss values are de-embedded from test board loss. 3. Needs external blocking capacitors on all RF ports. (Suggested Value = 47 pF) DC ELECTRICAL SPECIFICATIONS Parameter Min. Typ. Max. Units Supply Voltage, V +3.0 – +5.0 V DD Supply Current – 50 200 µA Control Voltage Low 0 – +0.5 V Control Voltage High +0.7 V – V V DD DD Control Current – 0.2 10 µA www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 2 OF 5 FAST SWITCHING SPDT RF Switch M3SWA-2-50DRA+ 50Ω 0.3 to 4500 MHz Absorptive RF Switch with Internal Driver Single Supply Voltage, +3 V to +5 V SWITCHING SPECIFICATIONS Parameter Condition Min. Typ. Max. Units Switching Time – 29 – ns 50% Control to 90%/10% RF RF P = 0 dBm IN RF Freq. = 500 MHz Video Leakage Control Freq. = 500 KHz – 24.8 – mV Control High = +3.7 V Control Low = 0 V Rise/Fall Time – 16 – ns 10 to 90% or 90 to 10%
