The GNA-252-5W+ is a GaN-on-SiC HEMT MMIC high power amplifier operating from 10 MHz to 2.5 GHz. Offering flat gain and high efficiency, this power amplifier is designed for demanding RF applications requiring high output power, excellent linearity, and a compact footprint. When driven with an input power level of +26 dBm, the amplifier provides over 13 dB of flat power gain across a broad frequency range, delivers more than 8 W of output power and achieves 47% power-added efficiency. At 1 GHz, IM3 is -30 dBc and IM5 is -57 dBc with a P of +26 dBm/tone. This excellent linearity preserves signal integrity, making OUT the amplifier ideal for high-fidelity communication systems. The device operates from a +28 V supply and consumes 400 mA of quiescent current. Potential applications include radar, electronic warfare, and cellular infrastructure. The GNA-252-5W+ is matched to 50Ω at the input and output, making it easy to implement. It comes in a 4×4 mm, 20-lead QFN-Style surface-mount package, ensuring excellent thermal performance and compatibility with high-volume manufacturing.
| Mini-Circuits | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | GNA-252-5W+ |
| Product Name | SMT MMIC, GaN Power Amplifier, 8 W Output Power, 10 to 2500 MHz, 50Ω, 4x4 mm QFN Style Package |
| Amplifier Type | Power Amplifier |
| Applications | Radar Systems |
| Operating Temperature | -55 to 95 C (-67 to 203 F) |
| Frequency Range | 10 to 2500 MHz |
| Minimum Gain | 13 dB |
