Mini-Circuits SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 4000 MHz, 50Ω, SOT-89 Style Package GALI-51F+

Description
Gali-51F+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 15,000 years at +85°C case temperature. Gali-51F+ is designed to be rugged for ESD and supply switch-on transients. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. T ECO-024667 GALI-51F+ MCL NY 250225 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier GALI-51F+ 50Ω DC to 4 GHz
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Description
Gali-51F+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 15,000 years at +85°C case temperature. Gali-51F+ is designed to be rugged for ESD and supply switch-on transients. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. T ECO-024667 GALI-51F+ MCL NY 250225 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier GALI-51F+ 50Ω DC to 4 GHz
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Suppliers

Company
Product
Description
Supplier Links
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 4000 MHz, 50Ω, SOT-89 Style Package - GALI-51F+ - Mini-Circuits
Brooklyn, NY, United States
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 4000 MHz, 50Ω, SOT-89 Style Package
GALI-51F+
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 4000 MHz, 50Ω, SOT-89 Style Package GALI-51F+
Gali-51F+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 15,000 years at +85°C case temperature. Gali-51F+ is designed to be rugged for ESD and supply switch-on transients. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. T ECO-024667 GALI-51F+ MCL NY 250225 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier GALI-51F+ 50Ω DC to 4 GHz

Gali-51F+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 15,000 years at +85°C case temperature. Gali-51F+ is designed to be rugged for ESD and supply switch-on transients. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. T ECO-024667 GALI-51F+ MCL NY 250225 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier GALI-51F+ 50Ω DC to 4 GHz

Supplier's Site Datasheet
RF Amplifiers - 3157-GALI-51F+TR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-GALI-51F+TR-ND
RF Amplifiers 3157-GALI-51F+TR-ND
RF Amplifier IC Cellular, PCS 0Hz ~ 4GHz SOT-89

RF Amplifier IC Cellular, PCS 0Hz ~ 4GHz SOT-89

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RF Amplifiers - 3157-GALI-51F+CT-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-GALI-51F+CT-ND
RF Amplifiers 3157-GALI-51F+CT-ND
RF Amplifier IC Cellular, PCS 0Hz ~ 4GHz SOT-89

RF Amplifier IC Cellular, PCS 0Hz ~ 4GHz SOT-89

Buy Now Datasheet
RF Amplifiers - 3157-GALI-51F+DKR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifier IC Cellular, PCS 0Hz ~ 4GHz SOT-89

RF Amplifier IC Cellular, PCS 0Hz ~ 4GHz SOT-89

Buy Now Datasheet
Laguna Hills, CA, United States
RF Amplifiers - GALI-51F+
823932-GALI-51F+
RF Amplifiers - GALI-51F+ 823932-GALI-51F+
Manufacturer: Mini-Circuits Win Source Part Number: 823932-GALI-51F+ Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Limited

Manufacturer: Mini-Circuits
Win Source Part Number: 823932-GALI-51F+
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited

Buy Now
RF and Wireless - RF Amplifiers - GALI-51F+ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
GALI-51F+
RF and Wireless - RF Amplifiers GALI-51F+
IC AMP CELLULAR 0HZ-4GHZ SOT89

IC AMP CELLULAR 0HZ-4GHZ SOT89

Supplier's Site

Technical Specifications

  Mini-Circuits DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers RF Amplifiers
Product Number GALI-51F+ 3157-GALI-51F+TR-ND 823932-GALI-51F+ GALI-51F+
Product Name SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 4000 MHz, 50Ω, SOT-89 Style Package RF Amplifiers RF Amplifiers - GALI-51F+ RF and Wireless - RF Amplifiers
RoHS Compliant RoHS
Operating Temperature -45 to 85 C (-49 to 185 F)
Frequency Range 4000 MHz 0.0 to 4000 MHz 0.0 to 4000 MHz
Minimum Gain 13.3 dB 13.3 dB ? to 13.3 dB
Maximum Gain 18 dB 13.3 dB 13.3 dB
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