The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
Lower R DS(on) without compromising FOM gd and FOM oss
Lower output charge
Ultra-low reverse recovery charge
Increased commutation ruggedness
Higher switching frequency possible
Benefits
Reduced paralleling
Size reduction enabled with SuperSO8 best-in-class
Higher power density designs
More rugged products
System cost reduction
Improved EMI behavior
Potential Applications
Low voltage drives
Telecom
Solar
Designers who used this product also designed with
BSC010N04LSI | N-Channel Power MOSFET
2EDN7524F | Gate Driver ICs
BSC016N06NS | N-Channel Power MOSFET
BSD235N | Small Signal/Small Power MOSFET
BSC026N08NS5 | N-Channel Power MOSFET
1EDN7512G | Gate Driver ICs
S70FL01GSAGMFM010 | Quad SPI Flash
BSC028N06NS | N-Channel Power MOSFET
1EDN8511B | Gate Driver ICs
XMC4200-F64K256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
BSS138W | Small Signal/Small Power MOSFET
CYPM1211-40LQXI | EZ-PD™ PMG1-S2 High-voltage MCU with USB-C & PD
IRL60HS118 | N-Channel Power MOSFET
IDH08G65C6 | CoolSiC™ Schottky Diodes
BSC340N08NS3 G | N-Channel Power MOSFET
BSZ097N04LS G | N-Channel Power MOSFET
IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPP60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC030N08NS5 | N-Channel Power MOSFET
BSC040N08NS5 | N-Channel Power MOSFET
BSC010N04LSI | N-Channel Power MOSFET
2EDN7524F | Gate Driver ICs
BSC016N06NS | N-Channel Power MOSFET
BSD235N | Small Signal/Small Power MOSFET
BSC026N08NS5 | N-Channel Power MOSFET
1EDN7512G | Gate Driver ICs
S70FL01GSAGMFM010 | Quad SPI Flash
BSC028N06NS | N-Channel Power MOSFET
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The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
- Lower R DS(on) without compromising FOM gd and FOM oss
- Lower output charge
- Ultra-low reverse recovery charge
- Increased commutation ruggedness
- Higher switching frequency possible
Benefits
- Reduced paralleling
- Size reduction enabled with SuperSO8 best-in-class
- Higher power density designs
- More rugged products
- System cost reduction
- Improved EMI behavior
Potential Applications
- Low voltage drives
- Telecom
- Solar
Designers who used this product also designed with
- BSC010N04LSI |
N-Channel Power MOSFET
- 2EDN7524F |
Gate Driver ICs
- BSC016N06NS |
N-Channel Power MOSFET
- BSD235N |
Small Signal/Small Power MOSFET
- BSC026N08NS5 |
N-Channel Power MOSFET
- 1EDN7512G |
Gate Driver ICs
- S70FL01GSAGMFM010 |
Quad SPI Flash
- BSC028N06NS |
N-Channel Power MOSFET
- 1EDN8511B |
Gate Driver ICs
- XMC4200-F64K256 BA |
32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
- BSS138W |
Small Signal/Small Power MOSFET
- CYPM1211-40LQXI |
EZ-PD™ PMG1-S2 High-voltage MCU with USB-C & PD
- IRL60HS118 |
N-Channel Power MOSFET
- IDH08G65C6 |
CoolSiC™ Schottky Diodes
- BSC340N08NS3 G |
N-Channel Power MOSFET
- BSZ097N04LS G |
N-Channel Power MOSFET
- IPP60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPP60R080P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC030N08NS5 |
N-Channel Power MOSFET
- BSC040N08NS5 |
N-Channel Power MOSFET
- BSC010N04LSI |
N-Channel Power MOSFET
- 2EDN7524F |
Gate Driver ICs
- BSC016N06NS |
N-Channel Power MOSFET
- BSD235N |
Small Signal/Small Power MOSFET
- BSC026N08NS5 |
N-Channel Power MOSFET
- 1EDN7512G |
Gate Driver ICs
- S70FL01GSAGMFM010 |
Quad SPI Flash
- BSC028N06NS |
N-Channel Power MOSFET
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