Infineon Technologies AG N-Channel Power MOSFET BSC093N15NS5

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N-Channel Power MOSFET - BSC093N15NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC093N15NS5
N-Channel Power MOSFET BSC093N15NS5
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Designers who used this product also designed with BSC010N04LSI | N-Channel Power MOSFET 2EDN7524F | Gate Driver ICs BSC016N06NS | N-Channel Power MOSFET BSD235N | Small Signal/Small Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 1EDN7512G | Gate Driver ICs S70FL01GSAGMFM010 | Quad SPI Flash BSC028N06NS | N-Channel Power MOSFET 1EDN8511B | Gate Driver ICs XMC4200-F64K256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 BSS138W | Small Signal/Small Power MOSFET CYPM1211-40LQXI | EZ-PD™ PMG1-S2 High-voltage MCU with USB-C & PD IRL60HS118 | N-Channel Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes BSC340N08NS3 G | N-Channel Power MOSFET BSZ097N04LS G | N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R080P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET BSC010N04LSI | N-Channel Power MOSFET 2EDN7524F | Gate Driver ICs BSC016N06NS | N-Channel Power MOSFET BSD235N | Small Signal/Small Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET 1EDN7512G | Gate Driver ICs S70FL01GSAGMFM010 | Quad SPI Flash BSC028N06NS | N-Channel Power MOSFET 1 2 3 4 5

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.


Summary of Features

  • Lower R DS(on) without compromising FOM gd and FOM oss
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Benefits

  • Reduced paralleling
  • Size reduction enabled with SuperSO8 best-in-class
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

Potential Applications

  • Low voltage drives
  • Telecom
  • Solar

Designers who used this product also designed with


  • BSC010N04LSI |
    N-Channel Power MOSFET
  • 2EDN7524F |
    Gate Driver ICs
  • BSC016N06NS |
    N-Channel Power MOSFET
  • BSD235N |
    Small Signal/Small Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • 1EDN7512G |
    Gate Driver ICs
  • S70FL01GSAGMFM010 |
    Quad SPI Flash
  • BSC028N06NS |
    N-Channel Power MOSFET
  • 1EDN8511B |
    Gate Driver ICs
  • XMC4200-F64K256 BA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • BSS138W |
    Small Signal/Small Power MOSFET
  • CYPM1211-40LQXI |
    EZ-PD™ PMG1-S2 High-voltage MCU with USB-C & PD
  • IRL60HS118 |
    N-Channel Power MOSFET
  • IDH08G65C6 |
    CoolSiC™ Schottky Diodes
  • BSC340N08NS3 G |
    N-Channel Power MOSFET
  • BSZ097N04LS G |
    N-Channel Power MOSFET
  • IPP60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP60R080P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC030N08NS5 |
    N-Channel Power MOSFET
  • BSC040N08NS5 |
    N-Channel Power MOSFET
  • BSC010N04LSI |
    N-Channel Power MOSFET
  • 2EDN7524F |
    Gate Driver ICs
  • BSC016N06NS |
    N-Channel Power MOSFET
  • BSD235N |
    Small Signal/Small Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • 1EDN7512G |
    Gate Driver ICs
  • S70FL01GSAGMFM010 |
    Quad SPI Flash
  • BSC028N06NS |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
END - OF - LIFE - BSC093N15NS5 - 1154698-BSC093N15NS5 - Win Source Electronics
Yishun, Singapore
END - OF - LIFE - BSC093N15NS5
1154698-BSC093N15NS5
END - OF - LIFE - BSC093N15NS5 1154698-BSC093N15NS5
Manufacturer: Infineon Technologies Win Source Part Number: 1154698-BSC093N15NS5 Family Name: BSC093N15NS5 Manufacturer Homepage: www.infineon.com ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154698-BSC093N15NS5
Family Name: BSC093N15NS5
Manufacturer Homepage: www.infineon.com
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Power MOSFET RF Transistors
Product Number BSC093N15NS5 1154698-BSC093N15NS5
Product Name N-Channel Power MOSFET END - OF - LIFE - BSC093N15NS5
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0093 ohms
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