- Trained on our vast library of engineering resources.

Infineon Technologies AG N-Channel Power MOSFET BSC100N10NSF-G

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC100N10NSF-G - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC100N10NSF-G
N-Channel Power MOSFET BSC100N10NSF-G
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Datacenter and computing solutions Designers who used this product also designed with 1EDB8275F | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS21271S | Gate Driver ICs IRLML0100 | N-Channel Power MOSFET 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS21271S | Gate Driver ICs IRLML0100 | N-Channel Power MOSFET 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 1 2 3

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).


Summary of Features

  • Excellent switching performance
  • World’s lowest RDS(on)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)

Applications

  • Datacenter and computing solutions

Designers who used this product also designed with


  • 1EDB8275F |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRLML0100 |
    N-Channel Power MOSFET
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRLML0100 |
    N-Channel Power MOSFET
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs

1
2
3

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC100N10NSF-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0100 ohms
Unlock Full Specs
to access all available technical data

Similar Products

N-Channel Power MOSFET - BSC190N12NS3-G - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0190 ohms
View Details
Small Signal/Small Power MOSFET - BSS119N - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 6 ohms
View Details
Automotive MOSFET - AUIRF6215S - Infineon Technologies AG
Infineon Technologies AG
Specs
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
VGS(off) 20 volts
View Details
5 suppliers
Power - MOSFET (Si/SiC) - Small Signal/Small Power MOSFET - BSS7728N - BSS7728N - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 5 ohms
View Details
4 suppliers