Richardson RFPD RF Power Transistor PH1214-80M

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH1214-80M is a radar pulsed power transistor designed for 80W output at 1.2-1.4 GHz with a 150µs pulse width and 10% duty cycle. It features a hermetic metal/ceramic package, NPN silicon construction in common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage of up to 70 V, peak collector current of 6.4 A, and junction temperature up to 200°C. It achieves 50% collector efficiency with 7.9 dB power gain and has a thermal resistance of 0.8 °C/W. The part is RoHS compliant and meets load mismatch tolerance of 3:1 and stability of 1.5:1.

Datasheet Summary
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PH1214-80M is a radar pulsed power transistor designed for 80W output at 1.2-1.4 GHz with a 150µs pulse width and 10% duty cycle. It features a hermetic metal/ceramic package, NPN silicon construction in common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage of up to 70 V, peak collector current of 6.4 A, and junction temperature up to 200°C. It achieves 50% collector efficiency with 7.9 dB power gain and has a thermal resistance of 0.8 °C/W. The part is RoHS compliant and meets load mismatch tolerance of 3:1 and stability of 1.5:1.

Suppliers

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Product
Description
Supplier Links
RF Power Transistor - PH1214-80M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH1214-80M
RF Power Transistor PH1214-80M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH1214-80M
Product Name RF Power Transistor
Package Type Ceramic Flanged
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