Richardson RFPD RF Power Transistor D5017UK

The D5017UK is a metal gate RF silicon FET designed for HF/VHF/UHF communication applications from 1 MHz to 175 MHz. It is housed in a 4-pin ceramic package with a metal flange, measuring 24.76 mm by 18.42 mm. The device supports a maximum power dissipation of 220 W and operates with a drain-source voltage up to 125 V. It provides a minimum common source power gain of 10 dB and drain efficiency of 50% at 150 W output. Thermal resistance from junction to case is 0.8°C/W. The part includes beryllium oxide in the ceramic substrate, requiring careful handling to avoid toxic dust exposure. It meets RoHS compliance.