Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHL640S-GE3

The SIHL640S-GE3 is a third-generation N-channel power MOSFET in a D2PAK (TO-263) surface-mount package, designed for high-current switching applications with logic-level gate drive. It has a drain-source voltage rating of 200 V, a maximum on-resistance of 0.18 Ω at Vₗₓ = 5 V and Iₓ = 10 A, and a repetitive avalanche current rating of 10 A. The device supports a maximum power dissipation of 3.1 W when mounted on a 1" square PCB and meets RoHS-compliant standards with lead-free terminations.