Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHG135N65S-GE3

The SiHG135N65S-GE3 is an N-channel MOSFET in a TO-247AC package for high-voltage switching applications such as server power supplies and PFC circuits. It has a drain-source voltage rating of 650 V, a maximum continuous drain current of 17 A at 150 °C, and a typical on-state resistance of 0.121 Ω at 25 °C and 10 V gate drive. The device is rated for 298 mJ of single-pulse avalanche energy and has a maximum power dissipation of 255 W. Its thermal resistance from junction to case is 0.49 °C/W. The part is lead-free, halogen-free, and complies with RoHS standards. Operating junction and storage temperatures range from -55 °C to 150 °C.