Fuji Electric Corp. of America Transistor 2SC3866

Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 32477753 - Radwell International
Willingboro, NJ, United States
Transistor
32477753
Transistor 32477753
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 3A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 32477753
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1052MCTR-E - 855018-2SA1052MCTR-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT Modules - 2PS12017E34W32132NOSA1-ND - DigiKey
Specs
Package Type Module
View Details
3 suppliers
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FL - Qorvo
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Package Type NI-650 Flanged
Power Gain 18.1 dB
View Details
2 suppliers