Vishay Intertechnology, Inc. N-Channel 21 A 600 V 0.18 ohm MOSFET Transistor SIHB22N60E-E3

TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3, FET General Purpose Power Product overview: SIHB22N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 21 A, 600 V, 0.18 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 21 A, 600 V, 0.18 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB22N60E-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 042630-SIHB22N60E-E3
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 1920pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)