Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3150L 2SC3150L

The 2SC3150L is an NPN silicon transistor designed for switching regulator applications, with a collector-to-base voltage rating of 900 V and a collector-to-emitter voltage rating of 800 V. It supports a continuous collector current of 3 A and a pulse current of up to 10 A under specified conditions. The device dissipates up to 50 W at a case temperature of 25°C and operates with a maximum junction temperature of 150°C. Packaged in a TO-220AB case, it features a fast switching speed with turn-on time of 1.0 µs, storage time of 3.0 µs, and fall time of 0.7 µs. The DC current gain (hFE) ranges from 15 to 30 for the L rank, measured at VCE=5 V and IC=0.2 A. The product meets no specified industry standards beyond its electrical ratings.