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Qorvo DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor TGF2933

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DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor - TGF2933 - Qorvo
Greensboro, NC, United States
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
TGF2933
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor TGF2933
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.

The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number TGF2933
Product Name DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
Transistor Technology / Material GaN
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