Qorvo DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor TGF2933

Description
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.
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Description
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.
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Suppliers

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Description
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DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor - TGF2933 - Qorvo
Greensboro, NC, United States
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
TGF2933
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor TGF2933
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.

The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-TGF2933-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-TGF2933-ND
RF FETs, MOSFETs 2312-TGF2933-ND
DC-25 GHZ, 7W, 28V GAN TRANSISTO

DC-25 GHZ, 7W, 28V GAN TRANSISTO

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number TGF2933 2312-TGF2933-ND
Product Name DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor RF FETs, MOSFETs
Transistor Technology / Material GaN
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