Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIE836DF-T1-GE3

Win Source Part Number: 1277566-SIE836DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Package / Case: 10-PolarPAK® (SH) Supplier Device Package: 10-PolarPAK® (SH) Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE836DFT1GE3,SIE836 DF-T1-GE3DKR,SIE836D F-T1-GE3TR,SIE836DF- T1-GE3CT Base Product Number: SIE836 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V