Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6973DQ-T1-E3 SI6973DQ-T1-E3

Manufacturer: Vishay
Win Source Part Number: 028591-SI6973DQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 30nC @ 4.5V
Maximum Rds On at Id,Vgs: 30 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

MOSFET 2P-CH 20V 4.1A 8TSSOP Product overview: SI6973DQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.1A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI6973DQ-T1-E3 can be used for catalog matching and distributor lookup.