Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6973DQ-T1-E3 SI6973DQ-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028591-SI6973DQ-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.1A Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 30nC @ 4.5V Maximum Rds On at Id,Vgs: 30 mOhm @ 4.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6973DQ-T1-E3 - 028591-SI6973DQ-T1-E3 - Win Source Electronics
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Description
Manufacturer: Vishay Win Source Part Number: 028591-SI6973DQ-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.1A Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 30nC @ 4.5V Maximum Rds On at Id,Vgs: 30 mOhm @ 4.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6973DQ-T1-E3 - 028591-SI6973DQ-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6973DQ-T1-E3
028591-SI6973DQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6973DQ-T1-E3 028591-SI6973DQ-T1-E3
Manufacturer: Vishay Win Source Part Number: 028591-SI6973DQ-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.1A Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 30nC @ 4.5V Maximum Rds On at Id,Vgs: 30 mOhm @ 4.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028591-SI6973DQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 30nC @ 4.5V
Maximum Rds On at Id,Vgs: 30 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028591-SI6973DQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6973DQ-T1-E3
Polarity P-Channel
V(BR)DSS 20 volts
PD 830 milliwatts
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