Vishay Intertechnology, Inc. MOSFET SI6441DQ-T1-E3

P-Channel 30-V (D-S) MOSFET in a TSSOP-8 package, designed for battery and load switching applications. It has a drain-source on-state resistance of 0.015 Ω at -10 V gate-source voltage and 0.024 Ω at -4.5 V, with a continuous drain current of 6.4 A at 70 °C. The device is halogen-free and RoHS compliant, with an operating junction temperature range of -55 °C to 150 °C and thermal resistance ratings of 95 °C/W junction-to-ambient and 38 °C/W junction-to-foot. It meets AEC-Q200 and UL 94 V-0 standards.