Vishay Intertechnology, Inc. 30V 5.6A 2.5W MOSFET Transistor SI5435DC-T1-E3

Description
MOSFET 30V 5.6A 2.5W Product overview: SI5435DC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.6A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.6A, 2.5W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI5435DC-T1-E3 can be used for catalog matching and distributor lookup.
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Description
MOSFET 30V 5.6A 2.5W Product overview: SI5435DC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.6A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.6A, 2.5W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI5435DC-T1-E3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
30V 5.6A 2.5W MOSFET Transistor
285-SI5435DC-T1-E3
30V 5.6A 2.5W MOSFET Transistor 285-SI5435DC-T1-E3
MOSFET 30V 5.6A 2.5W Product overview: SI5435DC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.6A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.6A, 2.5W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI5435DC-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 30V 5.6A 2.5W Product overview: SI5435DC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.6A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.6A, 2.5W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI5435DC-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3 - 960398-SI5435DC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3
960398-SI5435DC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3 960398-SI5435DC-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 960398-SI5435DC-T1-E 3 Length: 3.05 mm Drain to Source Voltage (Vdss): -30 V Number of Elements: 1 Power Dissipation: 1.3 W Height: 1.1 mm Weight: 84.99187 mg Number of Channels: 1 Number of Pins: 8 Width: 1.65 mm Rise Time: 5 ns Fall Time: 5 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.3 W Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 4.1 A Turn-Off Delay Time: 40 ns Drain to Source Resistance: 50 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 960398-SI5435DC-T1-E3
Length: 3.05 mm
Drain to Source Voltage (Vdss): -30 V
Number of Elements: 1
Power Dissipation: 1.3 W
Height: 1.1 mm
Weight: 84.99187 mg
Number of Channels: 1
Number of Pins: 8
Width: 1.65 mm
Rise Time: 5 ns
Fall Time: 5 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 1.3 W
Turn-On Delay Time: 11 ns
Continuous Drain Current (ID): 4.1 A
Turn-Off Delay Time: 40 ns
Drain to Source Resistance: 50 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-SI5435DC-T1-E3 960398-SI5435DC-T1-E3
Product Name 30V 5.6A 2.5W MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3
Polarity P-Channel
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