Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3 SI5435DC-T1-E3

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 960398-SI5435DC-T1-E3
Length: 3.05 mm
Drain to Source Voltage (Vdss): -30 V
Number of Elements: 1
Power Dissipation: 1.3 W
Height: 1.1 mm
Weight: 84.99187 mg
Number of Channels: 1
Number of Pins: 8
Width: 1.65 mm
Rise Time: 5 ns
Fall Time: 5 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 1.3 W
Turn-On Delay Time: 11 ns
Continuous Drain Current (ID): 4.1 A
Turn-Off Delay Time: 40 ns
Drain to Source Resistance: 50 mΩ
Gate to Source Voltage (Vgs): 20 V

MOSFET 30V 5.6A 2.5W Product overview: SI5435DC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.6A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.6A, 2.5W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI5435DC-T1-E3 can be used for catalog matching and distributor lookup.