Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3 SI5435DC-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 960398-SI5435DC-T1-E 3 Length: 3.05 mm Drain to Source Voltage (Vdss): -30 V Number of Elements: 1 Power Dissipation: 1.3 W Height: 1.1 mm Weight: 84.99187 mg Number of Channels: 1 Number of Pins: 8 Width: 1.65 mm Rise Time: 5 ns Fall Time: 5 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.3 W Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 4.1 A Turn-Off Delay Time: 40 ns Drain to Source Resistance: 50 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 960398-SI5435DC-T1-E 3 Length: 3.05 mm Drain to Source Voltage (Vdss): -30 V Number of Elements: 1 Power Dissipation: 1.3 W Height: 1.1 mm Weight: 84.99187 mg Number of Channels: 1 Number of Pins: 8 Width: 1.65 mm Rise Time: 5 ns Fall Time: 5 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.3 W Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 4.1 A Turn-Off Delay Time: 40 ns Drain to Source Resistance: 50 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3 - 960398-SI5435DC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3
960398-SI5435DC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3 960398-SI5435DC-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 960398-SI5435DC-T1-E 3 Length: 3.05 mm Drain to Source Voltage (Vdss): -30 V Number of Elements: 1 Power Dissipation: 1.3 W Height: 1.1 mm Weight: 84.99187 mg Number of Channels: 1 Number of Pins: 8 Width: 1.65 mm Rise Time: 5 ns Fall Time: 5 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.3 W Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 4.1 A Turn-Off Delay Time: 40 ns Drain to Source Resistance: 50 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 960398-SI5435DC-T1-E3
Length: 3.05 mm
Drain to Source Voltage (Vdss): -30 V
Number of Elements: 1
Power Dissipation: 1.3 W
Height: 1.1 mm
Weight: 84.99187 mg
Number of Channels: 1
Number of Pins: 8
Width: 1.65 mm
Rise Time: 5 ns
Fall Time: 5 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 1.3 W
Turn-On Delay Time: 11 ns
Continuous Drain Current (ID): 4.1 A
Turn-Off Delay Time: 40 ns
Drain to Source Resistance: 50 mΩ
Gate to Source Voltage (Vgs): 20 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 960398-SI5435DC-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5435DC-T1-E3
rDS(on) 0.0500 ohms
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF3805L-7P - 1020715-AUIRF3805L-7P - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts
PD 300000 milliwatts
View Details
5 suppliers
40 V, P-channel Trench MOSFET - BUK6Q26-40PJ - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
Package Type SOT8002-3
View Details
2 suppliers
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD212902PAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10 volts
View Details
4 suppliers