Vishay Intertechnology, Inc. SMD 12V 6.9A MOSFET Transistor SI5406DC-T1-GE3

N-Ch MOSFET 12V 6.9A 20mR SMD Product overview: SI5406DC-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 12V, 6.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 12V, 6.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5406DC-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 803692-SI5406DC-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 12V
Part Status: Obsolete (End Of Life)
Supplier Device Package: 1206-8 ChipFET
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SMD, Flat Lead
Power Dissipation (Maximum): 1.3W
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 20mOhm at 6.9A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 20nC at 4.5V
Current - Continuous Drain (Id) at 25°C: 6.9A
Vgs(th) (Maximum) at Id: 600mV at 1.2mA (Min)
Maximum Vgs: ±8V