The ALD1101 is a monolithic dual N-channel matched MOSFET pair designed for precision analog applications such as current mirrors, differential amplifiers, and analog switches. It is available in an 8-pin SOIC package with dimensions of 4.69 to 5.00 mm in length and 3.50 to 4.05 mm in width. The device features a low threshold voltage of 0.4V to 1.0V, a maximum drain-source voltage of 10V, and a power dissipation rating of 500mW. It operates over a temperature range of 0°C to +70°C, with a gate leakage current of 100pA at 25°C and a differential offset voltage matching of 2mV, 5mV, or 10mV depending on grade. The ALD1101B variant specifies a 5mV maximum offset voltage. It is RoHS compliant and enables high DC current gain up to 10^9 due to negligible gate leakage. Applications include precision current sources and voltage comparators.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 40mA 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 40mA 500mW Surface Mount 8-SOIC
MOSFET 2N-CH 10.6V 8SOIC
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD1101BSAL | 1014-1217-ND | ALD1101BSAL |
| Product Name | Dual N-Channel Matched MOSFET Pair | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Enhancement Mode | ||
| V(BR)DSS | 12 volts | ||
| IDSS | 40 milliamps |
