Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2480-AZ 2SK2480-AZ

The 2SK2480 is an N-channel power MOSFET designed for high-voltage switching applications, housed in an isolated TO-220 package measuring 10.0 mm × 4.5 mm with a lead pitch of 2.54 mm. It has a drain-to-source voltage rating of 900 V, a continuous drain current of 3.0 A, and a power dissipation of 35 W at 25 °C case temperature. The device features a maximum on-resistance of 4.0 Ω at VGS = 10 V and ID = 2.0 A, an input capacitance of 900 pF, and a single avalanche energy capability of 37.1 mJ. It operates within a channel temperature range up to 150 °C and a storage temperature range of -55 °C to +150 °C. The part meets the 'Standard' quality grade for industrial use and complies with RoHS directives.