Vishay Intertechnology, Inc. N-Channel MOSFET Transistor SI3446DV-T1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Product overview: SI3446DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3446DV-T1 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 189802-SI3446DV-T1
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-23-6 Thin, TSOT-23-6
Manufacturer Device Package: 6-TSOP
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250μA
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) @ Vds: 640pF @ 10V
Power - Max: 3.2W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance