Vishay Intertechnology, Inc. Discrete Semiconductor Products SI3446DV-T1

Description
Manufacturer: Vishay Win Source Part Number: 189802-SI3446DV-T1 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Manufacturer Device Package: 6-TSOP FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250μA Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 640pF @ 10V Power - Max: 3.2W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 189802-SI3446DV-T1 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Manufacturer Device Package: 6-TSOP FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250μA Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 640pF @ 10V Power - Max: 3.2W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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Discrete Semiconductor Products - 189802-SI3446DV-T1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
189802-SI3446DV-T1
Discrete Semiconductor Products 189802-SI3446DV-T1
Manufacturer: Vishay Win Source Part Number: 189802-SI3446DV-T1 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-23-6 Thin, TSOT-23-6 Manufacturer Device Package: 6-TSOP FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250μA Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 640pF @ 10V Power - Max: 3.2W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 189802-SI3446DV-T1
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-23-6 Thin, TSOT-23-6
Manufacturer Device Package: 6-TSOP
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250μA
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) @ Vds: 640pF @ 10V
Power - Max: 3.2W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
N-Channel MOSFET Transistor
278-SI3446DV-T1
N-Channel MOSFET Transistor 278-SI3446DV-T1
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Product overview: SI3446DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3446DV-T1 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Product overview: SI3446DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3446DV-T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 189802-SI3446DV-T1 278-SI3446DV-T1
Product Name Discrete Semiconductor Products N-Channel MOSFET Transistor
Polarity N-Channel N-Channel
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