Vishay Intertechnology, Inc. 12V 4.8A 2W MOSFET Transistor SI3435DV-T1

Description
MOSFET 12V 4.8A 2W Product overview: SI3435DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.8A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.8A, 2W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI3435DV-T1 can be used for catalog matching and distributor lookup.
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Description
MOSFET 12V 4.8A 2W Product overview: SI3435DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.8A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.8A, 2W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI3435DV-T1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
12V 4.8A 2W MOSFET Transistor
285-SI3435DV-T1
12V 4.8A 2W MOSFET Transistor 285-SI3435DV-T1
MOSFET 12V 4.8A 2W Product overview: SI3435DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.8A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.8A, 2W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI3435DV-T1 can be used for catalog matching and distributor lookup.

MOSFET 12V 4.8A 2W Product overview: SI3435DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.8A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.8A, 2W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI3435DV-T1 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3435DV-T1 - 964707-SI3435DV-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3435DV-T1
964707-SI3435DV-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3435DV-T1 964707-SI3435DV-T1
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 964707-SI3435DV-T1 Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 1.1 W Number of Pins: 6 Rise Time: 45 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSOP Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 4.8 A Drain to Source Breakdown Voltage: 12 V Turn-Off Delay Time: 90 ns Drain to Source Resistance: 73 mΩ Gate to Source Voltage (Vgs): 8 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 964707-SI3435DV-T1
Mounting: SMD (SMT)
Number of Elements: 1
Power Dissipation: 1.1 W
Number of Pins: 6
Rise Time: 45 ns
Fall Time: 45 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSOP
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 4.8 A
Drain to Source Breakdown Voltage: 12 V
Turn-Off Delay Time: 90 ns
Drain to Source Resistance: 73 mΩ
Gate to Source Voltage (Vgs): 8 V

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-SI3435DV-T1 964707-SI3435DV-T1
Product Name 12V 4.8A 2W MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3435DV-T1
Polarity P-Channel
PD 1100 milliwatts 1100 milliwatts
TJ -55 C (-67 F) -55 C (-67 F)
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