Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ215-E 2SJ215-E

The 2SJ215 is a silicon P-channel MOSFET designed for high-speed power switching in applications such as motor drive, DC-DC converters, and solenoid control. It is packaged in a TO-3P case with a maximum drain-to-source voltage of -60 V and continuous drain current of -35 A. The device has a static drain-to-source on-resistance of 0.045 to 0.09 Ω at -18 A and -10 V gate drive, and can be driven by a 4 V or 5 V source. It operates with a channel dissipation of 125 W at 25°C and a maximum junction temperature of 150°C. The part meets RoHS standards and is qualified for industrial use.