Vishay Intertechnology, Inc. MOSFET SI3403DV-T1-E3

P-Channel 20-V (D-S) MOSFET in a TSOP-6 package measuring 3 mm by 2.85 mm, designed for load switching in portable applications. It has a drain-source on-state resistance of 0.07 Ω at -4.5 V gate-source voltage and a continuous drain current of -5 A, limited by the package. The device meets RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. It operates within a junction temperature range of -55 °C to 150 °C, with a maximum power dissipation of 2 W at 25 °C ambient and thermal resistance from junction-to-ambient of 51 °C/W typical. The device is optimized for PWM applications with a low Qgd/Qgs ratio and pulse drain current rating of -20 A.