Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48STRR IRFZ48STRR

Description
Manufacturer: Vishay Win Source Part Number: 1047269-IRFZ48STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1047269-IRFZ48STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48STRR - 1047269-IRFZ48STRR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48STRR
1047269-IRFZ48STRR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48STRR 1047269-IRFZ48STRR
Manufacturer: Vishay Win Source Part Number: 1047269-IRFZ48STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1047269-IRFZ48STRR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 43A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 50A 60V 0.018ohm MOSFET Transistor
285-IRFZ48STRR
N-Channel 50A 60V 0.018ohm MOSFET Transistor 285-IRFZ48STRR
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Product overview: IRFZ48STRR from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50A, 60V, 0.018ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50A, 60V, 0.018ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFZ48STRR can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Product overview: IRFZ48STRR from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50A, 60V, 0.018ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50A, 60V, 0.018ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFZ48STRR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047269-IRFZ48STRR 285-IRFZ48STRR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ48STRR N-Channel 50A 60V 0.018ohm MOSFET Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 3700 to 190000 milliwatts 190000 milliwatts
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