Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N65APBF IRFB9N65APBF

Description
Manufacturer: Vishay Win Source Part Number: 069463-IRFB9N65APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1417pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 930 mOhm @ 5.1A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N65APBF - 069463-IRFB9N65APBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFB9N65APBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFB9N65APBF-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 650V, 8.5A, To-220 Rohs Compliant Vishay - 56AJ9864 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB9N65APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 069463-IRFB9N65APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1417pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 930 mOhm @ 5.1A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N65APBF - 069463-IRFB9N65APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N65APBF
069463-IRFB9N65APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N65APBF 069463-IRFB9N65APBF
Manufacturer: Vishay Win Source Part Number: 069463-IRFB9N65APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1417pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 930 mOhm @ 5.1A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 069463-IRFB9N65APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1417pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 930 mOhm @ 5.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFB9N65APBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB9N65APBF
Single FETs, MOSFETs IRFB9N65APBF
MOSFET N-CH 650V 8.5A TO220AB

MOSFET N-CH 650V 8.5A TO220AB

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 650V 8.5A MOSFET Transistor
2088-IRFB9N65APBF
N-Channel 650V 8.5A MOSFET Transistor 2088-IRFB9N65APBF
650V 8.5A N-Channel MOSFET TO-220AB 930mR Product overview: IRFB9N65APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8.5A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFB9N65APBF can be used for catalog matching and distributor lookup.

650V 8.5A N-Channel MOSFET TO-220AB 930mR Product overview: IRFB9N65APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8.5A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFB9N65APBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB9N65APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB9N65APBF-ND
Single FETs, MOSFETs IRFB9N65APBF-ND
N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB

N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB9N65APBF
MOSFET IRFB9N65APBF
MOSFET N-CH 650V HEXFET MOSFET

MOSFET N-CH 650V HEXFET MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 650V, 8.5A, To-220 Rohs Compliant Vishay - 56AJ9864 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 8.5A, To-220 Rohs Compliant Vishay
56AJ9864
Mosfet, N-Ch, 650V, 8.5A, To-220 Rohs Compliant Vishay 56AJ9864
MOSFET, N-CH, 650V, 8.5A, TO-220 ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 8.5A, TO-220 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB9N65APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB9N65APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB9N65APBF
MOSFET N-CH 650V 8.5A TO220AB

MOSFET N-CH 650V 8.5A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 069463-IRFB9N65APBF IRFB9N65APBF 2088-IRFB9N65APBF IRFB9N65APBF-ND IRFB9N65APBF 56AJ9864 IRFB9N65APBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N65APBF Single FETs, MOSFETs N-Channel 650V 8.5A MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 8.5A, To-220 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
PD 167000 milliwatts 167000 milliwatts 167000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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