Vishay Precision Group JFETs (Junction Field Effect) - 2N4338 2N4338

Description
Manufacturer: Vishay Win Source Part Number: 130231-2N4338 Packaging: Bulk Mounting: Through Hole Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Current - Drain (Idss) @ Vds (Vgs=0): 200μA @ 15V Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-206AA (TO-18) Maximum Power Dissipation: 300mW Max Input Capacitance: 7pF @ 15V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 130231-2N4338 Packaging: Bulk Mounting: Through Hole Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Current - Drain (Idss) @ Vds (Vgs=0): 200μA @ 15V Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-206AA (TO-18) Maximum Power Dissipation: 300mW Max Input Capacitance: 7pF @ 15V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
JFETs (Junction Field Effect) - 2N4338 - 130231-2N4338 - Win Source Electronics
Laguna Hills, CA, United States
JFETs (Junction Field Effect) - 2N4338
130231-2N4338
JFETs (Junction Field Effect) - 2N4338 130231-2N4338
Manufacturer: Vishay Win Source Part Number: 130231-2N4338 Packaging: Bulk Mounting: Through Hole Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Current - Drain (Idss) @ Vds (Vgs=0): 200μA @ 15V Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-206AA (TO-18) Maximum Power Dissipation: 300mW Max Input Capacitance: 7pF @ 15V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 130231-2N4338
Packaging: Bulk
Mounting: Through Hole
Polarity: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Current - Drain (Idss) @ Vds (Vgs=0): 200μA @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-206AA (TO-18)
Maximum Power Dissipation: 300mW
Max Input Capacitance: 7pF @ 15V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - JFETs
2N4338
Discrete Semiconductor Products - Transistors - JFETs 2N4338
JFET N-CH 50V TO206AA

JFET N-CH 50V TO206AA

Supplier's Site
MOSFET N-CH 50V 600UA TO-206AA - 880-2N4338 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 50V 600UA TO-206AA
880-2N4338
MOSFET N-CH 50V 600UA TO-206AA 880-2N4338
MOSFET N-CH 50V 600UA TO-206AA

MOSFET N-CH 50V 600UA TO-206AA

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 130231-2N4338 2N4338 880-2N4338
Product Name JFETs (Junction Field Effect) - 2N4338 Discrete Semiconductor Products - Transistors - JFETs MOSFET N-CH 50V 600UA TO-206AA
Polarity N-Channel; N-Channel
VGS(off) 0.3000 volts 0.3000 volts
PD 300 milliwatts 300 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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