Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB1392C-E 2SB1392C-E

The 2SB1392 is a silicon PNP bipolar junction transistor for low frequency power amplifier applications, housed in a TO-220FM package. It has a collector-to-base voltage rating of -70 V, collector-to-emitter voltage of -60 V, and collector current of -4 A. The collector power dissipation is 2 W at 25°C, with a maximum junction temperature of 150°C. The DC current gain (hFE) ranges from 35 to 200 depending on collector current. The part is not rated for medical, automotive, or aerospace use.