VBsemi Electronics Co. Ltd. Transistors FDG6316P-VB

Description
20V 1.8A 155mΩ@4.5V,1.8A 2 P-Channel SC-70-6 MOSFETs ROHS
Request a Quote
Description
20V 1.8A 155mΩ@4.5V,1.8A 2 P-Channel SC-70-6 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDG6316P-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
FDG6316P-VB
Transistors FDG6316P-VB
20V 1.8A 155mΩ@4.5V,1.8A 2 P-Channel SC-70-6 MOSFETs ROHS

20V 1.8A 155mΩ@4.5V,1.8A 2 P-Channel SC-70-6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDG6316P-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

CSD16414Q5 N-Channel NexFET™ Power MOSFET - CSD16414Q5 - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
7 suppliers
IGBT Module - 66040976 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair - ALD114904SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers