Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A60WS4VX(M TK12A60WS4VX(M

Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1121009-TK12A60WS4VX (M Rise Time: 23 ns Fall Time: 5.5 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): TK12A60W,S4VX(M; TK12A60W,S4VX(M); TK12A60WS4VXM; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 45 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 11.5 A Turn-Off Delay Time: 85 ns Gate to Source Voltage (Vgs): 30 V
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Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1121009-TK12A60WS4VX (M Rise Time: 23 ns Fall Time: 5.5 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): TK12A60W,S4VX(M; TK12A60W,S4VX(M); TK12A60WS4VXM; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 45 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 11.5 A Turn-Off Delay Time: 85 ns Gate to Source Voltage (Vgs): 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A60WS4VX(M - 1121009-TK12A60WS4VX(M - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A60WS4VX(M
1121009-TK12A60WS4VX(M
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A60WS4VX(M 1121009-TK12A60WS4VX(M
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1121009-TK12A60WS4VX (M Rise Time: 23 ns Fall Time: 5.5 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): TK12A60W,S4VX(M; TK12A60W,S4VX(M); TK12A60WS4VXM; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 45 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 11.5 A Turn-Off Delay Time: 85 ns Gate to Source Voltage (Vgs): 30 V

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1121009-TK12A60WS4VX(M
Rise Time: 23 ns
Fall Time: 5.5 ns
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): TK12A60W,S4VX(M; TK12A60W,S4VX(M); TK12A60WS4VXM;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Turn-On Delay Time: 45 ns
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 11.5 A
Turn-Off Delay Time: 85 ns
Gate to Source Voltage (Vgs): 30 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1121009-TK12A60WS4VX(M
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12A60WS4VX(M
TJ -55 C (-67 F)
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